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| DSI 2x55 Rectifier Diode IF(AV)M = 2x 56 A VRRM = 1200-1600 V miniBLOC, SOT-227 B E72873 VRSM V 1300 1700 Symbol IFRMS IF(AV)M IFSM VRRM V 1200 1600 Conditions Type DSI 2x55-12A DSI 2x55-16A Maximum Ratings (per diode) 120 56 650 700 570 610 2210 2060 1620 1560 -40...+150 150 -40...+150 A A A A A A A 2s A 2s A 2s A 2s C C C W V~ Nm/lb.in. Nm/lb.in. g TC = 80C; 180 sine TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I 2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Features International standard package miniBLOC (ISOTOP compatible) Isolation voltage 2500 V~ 2 independent rectifier diodes in one package Planar passivated chips q q q q TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot VISOL Md Weight TC = 25C 50/60 Hz, RMS IISOL 1 mA Mounting torque Terminal connection torque (M4) Applications Input rectifier diode Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders q q q q q 190 2500 1.5/13 1.5/13 30 miniBLOC, SOT-227 B Symbol IR VF VT0 rT RthJC RthCH Conditions TVJ = 25C TVJ = 150C IF = 60 A; VR = VRRM TVJ = 125C TVJ = 25C Characteristic Values (per diode) typ. max. 0.3 5 1.25 1.20 0.8 8 0.65 0.1 mA mA V V V mW K/W K/W M4 screws (4x) supplied Dim. A B C D E F G H J K L M N O P Q R S T U V W Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 37.80 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 3.30 0.780 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.20 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 4.57 0.830 Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.489 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 0.130 19.81 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 0.180 21.08 008 For power-loss calculations only TVJ = TVJM Data according to IEC 60747 (c) 2000 IXYS All rights reserved 1-2 DSI 2x55 80 A 70 IF 60 50 40 30 20 500 A 50Hz, 80% VRRM 104 As I2t 2 VR = 0 V TVJ=125C TVJ= 25C 400 IFSM TVJ = 45C 300 103 200 TVJ = 45C TVJ = 150C TVJ = 150C 100 10 0 0.0 0 0.001 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 8 910 ms t 0.4 0.8 VF 1.2 V 1.6 Fig. 1 Forward current versus voltage drop per diode 180 W 160 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 80 A 70 60 50 40 30 20 10 0 RthHA : 0.1 K/W 0.5 K/W 1.0 K/W 2.0 K/W 4.0 K/W 7.0 K/W IF(AV)M 80 100 A 0 IF(AV)M 20 40 60 80 100 120 140 C Tamb 0 20 40 60 80 100 120 140 C TC Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180 0.8 K/W ZthJC Fig. 5 Max. forward current versus case temperature, sine180 0.6 0.4 Constants for ZthJC calculation: i Rthi (K/W) 0.031 0.0554 0.114 0.281 0.1686 ti (s) 0.00024 0.0036 0.0235 0.142 0.7 0.2 0.0 0.001 DSI 2x55 1 2 3 4 5 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case (c) 2000 IXYS All rights reserved 2-2 |
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